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  2n2905a  pnp general purpose amplifier   ? general-purpose transistor for switching and amplifier applications ? housed in a to-39 case 
     symbol rating rating unit v ceo collector-emitter voltage 60 v v cbo collector-base voltage 60 v v ebo emitter-base voltage 5.0 v i c collector current, continuous 600 ma t j operating junction temperature -55 to +150  t stg storage temperature -55 to +150  
    
   symbl parameter min typ max units  
 
v (br)ceo collector-emitter breakdown voltage* (i c =10madc, i b =0) 60 70 --- vdc v (br)cbo collector-base breakdown voltage (i c     e =0) 60 100 --- vdc v (br)ebo emitter-base breakdown voltage (i e     c =0) 5.0 9.0 --- vdc i ces collector-emitter cutoff current (v ce =30vdc) --- 1.0 50 nadc i cbo collector-base cutoff current (v cb =50vdc) --- 0.25 10 nadc i ebo emitter-base cutoff current (v eb =3.5vdc)` --- 0.1 50 nadc  
 
h fe dc current gain* (i c    v ce =10vdc) (i c =1.0madc, v ce =10vdc) (i c =10madc, v ce =10vdc) (i c =150madc, v ce 10vdc) (i c =500madc, v ce =10vdc) 75 100 100 100 50 225 250 --- 180 80 --- 450 --- 300 --- --- --- --- --- --- v ce(sat) collector-emitter saturation voltage (i c =150madc, i b =15madc) (i c =500madc, i b =50madc) --- --- 0.18 0.5 0.4 1.6 vdc v be(sat) base-emitter saturation voltage (i c =150madc, i b =15madc) (i c =500madc, i b =50madc) --- --- 0.87 1.0 1.3 2.6 vdc dimensions inches mm dim min max min max note a .335 .370 8.509 9.40  b .305 .335 7.747 8.509  c .240 .260 6.096 6.604 d .50 .75 12.7 19.05 e .200 5.08   f .029 .045 7.366 11.43 g ----- .050 ----- 1.27 h .009 .031 0.229 7.874 j 44 46 44 46 k .028 .034 0.711 0.864 l .016 .021 0.406 0.533  revision: 5 2008/01/01  
 omp onents 20736 marilla street chatsworth       
     mcc tm micro commercial components www. mccsemi .com 1 of 3 notes:1.high temperature solder exemption applied, see eu directive annex 7. ? lead free finish/rohs compliant(note 1) ("p" suffix designates rohs compliant. see ordering information)
symbl parameter min typ max units 
     ac h fe short circuit current transfer ratio (i c =1.0madc, v ce =10vdc,f=1.0khz) 100 250 --- --- c obo open circuit output capacitance (v cb =10vdc, i e =0, 100kh z 
     t on saturated tum on switching time to 90% 16v,50 ohm input pulse --- 25 45 ns t off saturated tum off switching time to10% 16v,50 ohm input pulse --- 200 300 ns mcc 2n2905a revision: 5 2008/01/01 tm micro commercial components www. mccsemi .com 2 of 3
mcc revision: 5 2008/01/01 tm micro commercial components www. mccsemi .com 3 of 3 products are represented on our website, harmless against all damages. ***applications disclaimer*** ***important notice*** aerospace or military applications. products offer by micro commercial components corp . are not intended for use in medical, micro commercial components corp . reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . micro commercial components corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . the user of products in such applications shall assume all risks of such use and will agree to hold micro commercial components corp . and all the companies whose rdering nformation evice packing part umberp ulk; pcso


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